149 darlington 2sd2389 i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a e t characteristics i c e v be temperature characteristics (typical) v ce (sat) e i b characteristics (typical) pc e ta derating safe operating area (single pulse) f t e i e characteristics (typical) 0 0 2 4 6 8 246 collector-emitter voltage v ce (v) collector current i c (a) 10ma 2.5ma 2.0ma 1.8ma 1.5ma 1.3ma 1.0ma 0.8ma 0.5ma i b =0.3ma 02 0.5 1 5 8 collector current i c (a) dc current gain h fe (v ce =4v) 1000 5000 10000 40000 typ 0 8 6 4 2 02 1 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c (case temp) e30?c (case temp) 80 60 40 20 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink 10 50 5 3 100 200 150 0.05 0.03 1 0.5 0.1 10 20 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling dc 100ms 10ms 0 3 2 1 0.2 1 0.5 10 5 200 100 50 base current i b (ma) collector-emitter saturation voltage v ce(sat) (v) i c =4a i c =6a i c =8a (v ce =4v) 0.2 0.5 5 8 1 collector current i c (a) dc current gain h fe 1000 500 5000 10000 50000 125?c 25?c e30?c e0.02 e0.1 e1 e8 0 20 40 120 100 80 60 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) typ 0.2 0.5 4 1 11050 5 100 500 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) silicon npn triple diffused planar transistor (complement to type 2sb1559) application : audio, series regulator and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 160 150 5 8 1 80(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics ratings 100 max 100 max 150 min 5000 min * 2.5 max 3.0 max 80 typ 85 typ unit m a m a v v v mhz pf conditions v cb =160v v eb =5v i c =30ma v ce =4v, i c =6a i c =6a, i b =6ma i c =6a, i b =6ma v ce =12v, i e =?a v cb =10v, f=1mhz (ta=25?) (ta=25?) symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b n typical switching characteristics (common emitter) v cc (v) 60 r l ( ) 10 i c (a) 6 v bb2 (v) ? i b2 (ma) ? t on ( m s) 0.6typ t stg ( m s) 10.0typ t f ( m s) 0.9typ i b1 (ma) 6 v bb1 (v) 10 weight : approx 2.0g a. part no. b. lot no. b c e (70 w ) equivalent circuit * h fe rank o(5000 to 12000), p(6500 to 20000), y(15000 to 30000)
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